Optical modulation at around 1550 nm in an InGaAlAs optical waveguide containing an InGaAs/AlAs resonant tunneling diode

We report electroabsorption modulation of light at around 1550 nm in a unipolar InGaAlAs optical waveguide containing an InGaAs/AlAs double-barrier resonant tunneling diode ~RTD!. The RTD peak-to-valley transition increases the electric field across the waveguide, which shifts the core material absor...

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Detalhes bibliográficos
Autor principal: Figueiredo, J. M. L. (author)
Outros Autores: Boyd, A. R. (author), Stanley, C. R. (author), Ironside, C. N. (author), McMeekin, S. G. (author), Leite, A. M. P. (author)
Formato: article
Idioma:eng
Publicado em: 2012
Assuntos:
Resonant tunneling diode
Texto completo:http://hdl.handle.net/10400.1/1183
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/1183

Texto Completo

http://hdl.handle.net/10400.1/1183

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