Planar non-volatile memory based on metal nanoparticles

Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reachin...

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Detalhes bibliográficos
Autor principal: Kiazadeh, Asal (author)
Outros Autores: Gomes, Henrique L. (author), Costa, Ana M. Rosa da (author), Rocha, P. R. F. (author), Chen, Q. (author), Moreira, José (author), De Leeuw, Dago M. (author), Meskers, S. C. J. (author)
Formato: article
Idioma:eng
Publicado em: 2013
Assuntos:
Electrical properties
Nanostructure
Ag
Texto completo:http://hdl.handle.net/10400.1/3230
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3230
Descrição
Resumo:Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

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