Boron-doped nanocrystalline silicon thin films for solar cells

This article reports on the structural, electronic, and optical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) thin films. The films were deposited by plasma-enhanced chemical vapour deposition (PECVD) at a substrate temperature of 150 degrees C. Crystalline volume fractio...

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Detalhes bibliográficos
Autor principal: Fathi, E. (author)
Outros Autores: Vygranenko, Yuri (author), Vieira, Manuela (author), Sazonov, A. (author)
Formato: article
Idioma:eng
Publicado em: 2013
Assuntos:
Thin solid films
Nanocrystalline silicon
PECVD
Solar cells
Microcrystalline silicon
Amorphous-silicon
Raman-spectroscopy
SI nanocrystals
P-layer
Thickness
Hydrogen
Silane
Window
Seed
Texto completo:http://hdl.handle.net/10400.21/2112
País:Portugal
Oai:oai:repositorio.ipl.pt:10400.21/2112
Descrição
Resumo:This article reports on the structural, electronic, and optical properties of boron-doped hydrogenated nanocrystalline silicon (nc-Si: H) thin films. The films were deposited by plasma-enhanced chemical vapour deposition (PECVD) at a substrate temperature of 150 degrees C. Crystalline volume fraction and dark conductivity of the films were determined as a function of trimethylboron-to-silane flow ratio. Optical constants of doped and undoped nc-Si: H were obtained from transmission and reflection spectra. By employing p(+) nc-Si: H as a window layer combined with a p' a-SiC buffer layer, a-Si: H-based p-p'-i-n solar cells on ZnO:Al-coated glass substrates were fabricated. Device characteristics were obtained from current-voltage and spectral-response measurements. (C) 2011 Elsevier B. V. All rights reserved.

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