Cd and Cu interdiffusion in Cu(In,Ga)Se2/CdS hetero-interfaces

We report a detailed characterization of an industry-like prepared Cu(In,Ga)Se2 (CIGS)/CdS heterojunction by scanning transmission electron microscopy (STEM) and photoluminescence (PL). Energy dispersive x-ray spectroscopy (EDS) shows the presence of several regions in the CIGS layer that are Cu dep...

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Detalhes bibliográficos
Autor principal: Salomé, Pedro M. P. (author)
Outros Autores: Ribeiro-Andrade, Rodrigo (author), Teixeira, Jennifer P. (author), Keller, Jan (author), Törndahl, Tobias (author), Nicoara, Nicoleta (author), Edoff, Marika (author), González, Juan Carlos (author), Leitão, Joaquim Pratas (author), Sadewasser, Sascha (author)
Formato: article
Idioma:eng
Publicado em: 2021
Assuntos:
Thin films
Solar cells
Cu(In,Ga)Se2 (CIGS)
CdS
Diffusion
Transmission electron microscopy (TEM)
Texto completo:http://hdl.handle.net/10773/30565
País:Portugal
Oai:oai:ria.ua.pt:10773/30565

Texto Completo

http://hdl.handle.net/10773/30565

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