Phase selective growth of Cu12Sb4S13 and Cu3SbS4 thin films by chalcogenization of simultaneous sputtered metal precursors

In this work, it is presented a procedure to grow single phase Cu12Sb4S13 and Cu3SbS4 thin films consisting on the annealing of simultaneously sputtered metal precursors fllowed by a annealing treatment in a sulphur atmosphere. The selection of the ternary phase which is intended to grow is performe...

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Detalhes bibliográficos
Autor principal: Fernandes, P. A. (author)
Outros Autores: Shongalova, A. (author), da Cunha, A. F. (author), Teixeira, J. P. (author), Leitão, J. P. (author), Cunha, J. M. V. (author), Bose, S. (author), Salomé, P. M. P. (author), Correia, M. R. (author)
Formato: article
Idioma:eng
Publicado em: 2021
Assuntos:
Texto completo:http://hdl.handle.net/10773/30485
País:Portugal
Oai:oai:ria.ua.pt:10773/30485