PL studies on ZnO single crystals implanted with thulium ions

ZnO single crystals implanted with different fluences of thulium ions and subject to different annealing conditions present multiple-Tm related optical centres. After implantation, the Tm ions are incorporated in a highly damaged region, some of them being placed at Zn sites (SZn). Following anneali...

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Detalhes bibliográficos
Autor principal: Peres, M. (author)
Outros Autores: Wang, J. (author), Soares, M. J. (author), Neves, A. (author), Monteiro, T. (author), Rita, E. (author), Wahl, U. (author), Correia, J. G. (author), Alves, E. (author)
Formato: article
Idioma:eng
Publicado em: 2004
Assuntos:
Texto completo:http://hdl.handle.net/10773/5666
País:Portugal
Oai:oai:ria.ua.pt:10773/5666
Descrição
Resumo:ZnO single crystals implanted with different fluences of thulium ions and subject to different annealing conditions present multiple-Tm related optical centres. After implantation, the Tm ions are incorporated in a highly damaged region, some of them being placed at Zn sites (SZn). Following annealing, the optical activation of Tm ions is accompanied by a progressive lattice recovery. The main intraionic luminescence, observed with above band gap excitation, is dominated by the near infrared emission due to the transition and can be observed up to near RT.