Electric field switching in a resonant tunneling diode electroabsorption modulator

The basic mechanism underlying electric field switching produced by a resonant tunneling diode (RTD) is analyzed and the theory compared with experimental results; agreement to within 12% is achieved. The electroabsorption modulator (EAM) device potential of this effect is explored in an optical wav...

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Bibliographic Details
Main Author: Figueiredo, J. M. L. (author)
Other Authors: Ironside, C. N. (author), Stanley, C. R. (author)
Format: article
Language:eng
Published: 2012
Subjects:
Online Access:http://hdl.handle.net/10400.1/1194
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/1194
Description
Summary:The basic mechanism underlying electric field switching produced by a resonant tunneling diode (RTD) is analyzed and the theory compared with experimental results; agreement to within 12% is achieved. The electroabsorption modulator (EAM) device potential of this effect is explored in an optical waveguide configuration. It is shown that a RTD-EAM can provide significant absorption coefficient change, via the Franz– Keldysh effect, at appropriate optical communication wavelengths around 1550 nm and can achieve up to 28-dB optical modulation in a 200- m active length device. The advantage of the RTD-EAM over the conventional reverse-biased p–n junction EAM, is that the RTD-EAM has, in essence, an integrated electronic amplifier and, therefore, requires considerably less switching power.