Finite-element modeling and optimization-based parameter extraction algorithm for NPT-IGBTs

A finite-element, physics-based, non-punch-through (NPT) insulated gate bipolar transistor (IGBT) model is presented in this paper. The model's core is based on solving the ambipolar diffusion equation through a variational formulation, resulting in a system of ordinary differential equations (...

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Bibliographic Details
Main Author: Rui Chibante (author)
Other Authors: Armando Araujo (author), Adriano Carvalho (author)
Format: article
Language:eng
Published: 2009
Subjects:
Engenharia electrónica, Engenharia electrotécnica, electrónica e informática
Electronic engineering, Electrical engineering, Electronic engineering, Information engineering
Online Access:https://hdl.handle.net/10216/95924
Country:Portugal
Oai:oai:repositorio-aberto.up.pt:10216/95924

Internet

https://hdl.handle.net/10216/95924

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