A FEM punch-through IGBT model using an efficient parameter extraction method
A Finite Element physics-based punch-through IGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE...
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| Other Authors: | , |
| Format: | book |
| Language: | eng |
| Published: |
2005
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| Subjects: | |
| Online Access: | https://repositorio-aberto.up.pt/handle/10216/277 |
| Country: | Portugal |
| Oai: | oai:repositorio-aberto.up.pt:10216/277 |
| Summary: | A Finite Element physics-based punch-through IGBT model is presented. The model's core is based on solving the Ambipolar Diffusion Equation (ADE) trough a variational formulation, resulting in a system of ODEs. The approach enables an easy implementation into a standard circuit simulator SPICE by means of an electrical analogy with the resulting system of ODEs, solved as a set of current controlled RC nets that describes charge carrier distribution in low-doped zone. The issue of parameter extraction for physics-based IGBT models is also addressed. An optimisation-based algorithm enabling an efficient parameter extraction method for IGBT model is discussed. Model is validated comparing experimental and simulated results. |
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