Low-temperature fabrication of layered self organized ge clusters by RF-sputtering

In this article, we present an investigation of (Ge + SiO2)/SiO2 multilayers deposited by magnetron sputtering and subsequently annealed at different temperatures. The structural properties were investigated by transmission electron microscopy, grazing incidence small angles X-ray scattering, Ruther...

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Detalhes bibliográficos
Autor principal: Pinto, S. R. C. (author)
Outros Autores: Rolo, Anabela G. (author), Buljan, M. (author), Chahboun, A. (author), Bernstorff, S. (author), Barradas, N. P. (author), Alves, E. (author), Kashtiban, R. J. (author), Bangert, U. (author), Gomes, M. J. M. (author)
Formato: article
Idioma:eng
Publicado em: 2011
Assuntos:
GISAXS grazing incidence small angle X-ray scattering
HRTEM high resolution transmission electron microscopy
NCs: nanocrystals
Ge clusters
RBS: Rutherford backscattering spectrometry
XPS: X-ray photoelectron spectroscopy
Raman spectroscopy
Magnetron sputtering
(Ge + SiO2) / SiO2 multilayers
Low temperature
Science & Technology
Texto completo:http://hdl.handle.net/1822/15689
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/15689

Texto Completo

http://hdl.handle.net/1822/15689

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