Electronic excitation to low-lying states of GeF4 molecule by electron impact

We report on the measurements of the electron impact electronic excitation cross sections for XF4 (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 - 18 eV. For a target of GeF4 molecule, the optically-forbidden behavior has been observe...

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Bibliographic Details
Main Author: Ohtomi, S. (author)
Other Authors: Matsui, M. (author), Mochizuki, Y. (author), Suga, A. (author), Kato, H. (author), Hoshino, M. (author), Duflot, D. (author), Limão-Vieira, P. (author), Tanaka, Hideaki (author)
Format: conferenceObject
Language:eng
Published: 2018
Subjects:
SCATTERING
SPECTROSCOPY
Physics and Astronomy(all)
Online Access:https://doi.org/10.1088/1742-6596/635/7/072041
Country:Portugal
Oai:oai:run.unl.pt:10362/36020
Description
Summary:We report on the measurements of the electron impact electronic excitation cross sections for XF4 (X = C, Si and Ge) molecules at 100 eV, 5° scattering angle and 30 eV, 30° in the electron energy loss range 8.0 - 18 eV. For a target of GeF4 molecule, the optically-forbidden behavior has been observed in the lower electron energy loss range.

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