Switching in polymeric resistance random-access memories (RRAMS)

Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the se...

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Bibliographic Details
Main Author: Gomes, Henrique L. (author)
Other Authors: Benvenho, A. R. V. (author), De Leeuw, Dago M. (author), Cölle, M. (author), Stallinga, Peter (author), Verbakel, F. (author), Taylor, D. M. (author)
Format: article
Language:eng
Published: 2014
Subjects:
Organic memory
Switching
Impedance spectroscopy
Oxide
Traps
Online Access:http://hdl.handle.net/10400.1/3273
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3273
Description
Summary:Resistive switching in aluminum-polymer-based diodes has been investigated using small signal impedance measurements. It is shown that switching is a two-step process. In the first step, the device remains highly resistive but the low frequency capacitance increases by orders of magnitude. In the second step, resistive switching takes place. A tentative model is presented that can account for the observed behavior. The impedance analysis shows that the device does not behave homogenously over the entire electrode area and only a fraction of the device area gives rise to switching.

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