Memristor based on amorphous zinc-tin oxide Schottky diodes

This work reports the fabrication and characterization of metal-insulator-metal (MIM) structures based on Schottky junction between platinum and zinc-tin oxide (ZTO) for memristor application. The devices were produced exclusively by physical vapor deposition methods at room temperature (RT). Before...

Full description

Bibliographic Details
Main Author: Branca, Nuno Miguel de Almeida Casa (author)
Format: masterThesis
Language:eng
Published: 2020
Subjects:
memristor
resistive switching memory
ZTO
transparent electronic
Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia
Online Access:http://hdl.handle.net/10362/99348
Country:Portugal
Oai:oai:run.unl.pt:10362/99348

Internet

http://hdl.handle.net/10362/99348

Similar Items