Non-radiative and radiative properties of PLD-deposited polycrystalline GaN studied by UV ps-to-ns laser pulses

We have applied short laser pulses with a minimal pulse width of 5 ps to study the non-radiative and radiative carrier density decay in polycrystalline GaN. The GaN films are deposited by a cyclic pulsed laser deposition (PLD) technique at a relatively low substrate temperature of 600 °C on sapphire...

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Detalhes bibliográficos
Autor principal: Niehus, M. (author)
Outros Autores: Sanguino, P. (author), Schwarz, R. (author), Fedorov, A. (author), Martinho, J.M.G. (author), Soares, Manuel (author), Monteiro, Teresa (author), Wünsch, F. (author), Kunst, M. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
Atomic force microscopy
Carrier concentration
Electron traps
Epitaxial growth
Laser pulses
Light emitting diodes
Photoluminescence
Photomultipliers
Polycrystalline materials
Probability
Pulsed laser deposition
Sapphire
Scanning electron microscopy
Thin films
Transport properties
X ray photoelectron spectroscopy
Stready-state photoluminescence
Thermal mismatch
Time-resolved photoluminescence (TRPL)
Transient photocurrents
Gallium nitride
Texto completo:http://hdl.handle.net/10773/5512
País:Portugal
Oai:oai:ria.ua.pt:10773/5512

Texto Completo

http://hdl.handle.net/10773/5512

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