Dynamic behavior of resistive random access memories (RRAMS) based on plastic semiconductor (RRAMS) based on plastic semiconductor
Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structur...
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| Outros Autores: | , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2014
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10400.1/3314 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/3314 |