Multiple negative differential conductance regions and inelastic phonon assisted tunneling in graphene-hBN-graphene structures
In this paper we study in detail the effect of the rotational alignment between a hexagonal boron nitride (hBN) slab and the graphene layers in the vertical current of a a graphene-hBN-graphene device. We show how for small rotational angles, the transference of momentum by the hBN crystal lattice le...
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| Outros Autores: | , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2016
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/1822/43420 |
| País: | Portugal |
| Oai: | oai:repositorium.sdum.uminho.pt:1822/43420 |