Electronic conduction processes in VCM-type metal-oxide ReRAM cells
New applications, such as neuromorphic computing, and the limitations of current semiconductor technologies demand a revolution in electronic devices. As one of the key enablers of a new electronics paradigm, redox-based resistive switching random access memory (ReRAM) has been the focus of much res...
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| Formato: | doctoralThesis |
| Idioma: | eng |
| Publicado em: |
2021
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| Texto completo: | http://hdl.handle.net/10773/30371 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/30371 |