Influence of neutron irradiation and annealing on the optical properties of GaN
Epitaxial GaN layers were irradiated with fast and thermal neutrons in the Portuguese Research Reactor. Irradiation leads to a quenching of the typical GaN near band edge and yellow luminescence for samples excited with above band gap photon energy. Although structural techniques indicate a full rec...
| Autor principal: | |
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| Outros Autores: | , , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/9572 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/9572 |