The Role of Edge Dislocations on the Red Luminescence of ZnO Films Deposited by RF-Sputtering

The existence of extended defects (i.e., dislocations) in inorganic semiconductors, such as GaN or ZnO, responsible for broad emission peaks in photoluminescence analysis remains unresolved. The possible assignments of these luminescence bands are still matter of discussion. In this study, two diffe...

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Bibliographic Details
Main Author: Felix, Rocio (author)
Other Authors: Peres, Marco (author), Magalhaes, Sergio (author), Correia, Maria Rosario (author), Lourenco, Armando (author), Monteiro, Teresa (author), Garcia, Rafael (author), Morales, Francisco M. (author)
Format: article
Language:eng
Published: 2017
Subjects:
MOLECULAR-BEAM EPITAXY
THREADING DISLOCATIONS
STACKING-FAULTS
THIN-FILMS
SI 111
PHOTOLUMINESCENCE
EMISSION
GAN
TRANSITIONS
DEPENDENCE
Online Access:http://hdl.handle.net/10773/20071
Country:Portugal
Oai:oai:ria.ua.pt:10773/20071

Internet

http://hdl.handle.net/10773/20071

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