The LP-MOCVD of CdS/Bi2S3 bilayers using single-molecule precursors

The single-molecule precursors [Cd(S2CNMe n-Hex)2] and [Bi(S2CNMe n-Hex)3] (Me = methyl; n-Hex = n-hexyl) were used to prepare CdS/Bi2S3 layers by low-pressure metal organic chemical vapour deposition (LP-MOCVD). The bilayers were deposited onto glass substrates at 400–450 jC for varying growth cond...

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Bibliographic Details
Main Author: Monteiro, OC (author)
Other Authors: Trindade, T (author), Park, JH (author), O'Brien, P (author)
Format: article
Language:eng
Published: 2004
Subjects:
Chemical vapour deposition
Semiconductors
Molecular precursors
Solar energy materials
Online Access:http://hdl.handle.net/10773/6033
Country:Portugal
Oai:oai:ria.ua.pt:10773/6033
Description
Summary:The single-molecule precursors [Cd(S2CNMe n-Hex)2] and [Bi(S2CNMe n-Hex)3] (Me = methyl; n-Hex = n-hexyl) were used to prepare CdS/Bi2S3 layers by low-pressure metal organic chemical vapour deposition (LP-MOCVD). The bilayers were deposited onto glass substrates at 400–450 jC for varying growth conditions. The materials were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and optical measurements. The results were compared with those obtained for the single phases.

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