Analysis of deep levels in a phenylenevinylene polymer by transient capacitance methods
Transient capacitance methods were applied to the depletion region of an abrupt asymmetric n(+) -p junction of silicon and unintentionally doped poly[2-methoxy, 5 ethyl (2' hexyloxy) paraphenylenevinylene] (MEH-PPV). Studies in the temperature range 100-300 K show the presence of a majority-car...
| Autor principal: | |
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| Outros Autores: | , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2015
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| Texto completo: | http://hdl.handle.net/10400.1/6634 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6634 |