Photocurrents in P3MeT Schottky barrier diodes
The photocurrent action spectrum of a Schottky diode formed from electrodeposited poly(3-methylthiophene) is shown to follow closely the UV-visible absorption spectrum. At low forward bias, the peak photocurrent asymptotes to the expected square-root dependence on total potential, V-t, across the de...
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| Other Authors: | , |
| Format: | article |
| Language: | eng |
| Published: |
2015
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| Online Access: | http://hdl.handle.net/10400.1/6626 |
| Country: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6626 |
| Summary: | The photocurrent action spectrum of a Schottky diode formed from electrodeposited poly(3-methylthiophene) is shown to follow closely the UV-visible absorption spectrum. At low forward bias, the peak photocurrent asymptotes to the expected square-root dependence on total potential, V-t, across the depletion region. At high reverse bias the superlinear dependence of the photocurrent on V-t suggests that internal photoemission from the rectifying aluminium electrode may be the dominant process. |
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