Strain distribution in GaN hexagons measured by Raman spectroscopy
Epitaxial growth of GaN layers normally starts in a three-dimensional growth mode at nucleation sites. Growth islands are formed which coalesce when a certain layer thickness is achieved. In our samples these islands show hexagonal structure and in some cases a flat surface plane perpendicular to th...
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| Outros Autores: | , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
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| Texto completo: | http://hdl.handle.net/10773/5635 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/5635 |