Lattice location and optical activation of rare earth implanted GaN
This paper reviews the current knowledge on rare earths (REs) implanted into GaN with a special focus on their lattice location and on the optical activation by means of thermal annealing. While emission channeling experiments have given information on the lattice location of rare earths following l...
| Autor principal: | |
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| Outros Autores: | , , , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/6479 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/6479 |