Graphene field-effect transistor array with integrated electrolytic gates scaled to 200 mm

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached the same level of progress. The architecture of graphene field...

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Bibliographic Details
Main Author: Vieira, N. C. S. (author)
Other Authors: Borme, J. (author), Machado Jr., G. (author), Cerqueira, M. F. (author), Freitas, P. P. (author), Zucolotto, V. (author), Peres, N. M. R. (author), Alpuim, P. (author)
Format: article
Language:eng
Published: 2016
Subjects:
graphene
field-effect transistor
chemical sensor
photolithography
gate capacitance
Ciências Naturais::Ciências Físicas
Science & Technology
Online Access:http://hdl.handle.net/1822/43629
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/43629

Internet

http://hdl.handle.net/1822/43629

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