Effect of the matrix on the 1.5 microm photoluminescence of Er-doped silicon quantum dots

Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f. sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite...

ver descrição completa

Detalhes bibliográficos
Autor principal: Cerqueira, M. F. (author)
Outros Autores: Stepikhova, M. (author), Losurdo, M. (author), Monteiro, T. (author), Soares, Manuel Jorge (author), Peres, M. (author), Neves, A. (author), Alves, E. (author)
Formato: conferencePaper
Idioma:eng
Publicado em: 2006
Assuntos:
Silicon QD
Ellipsometry
Photoluminescence
Structure
Science & Technology
Texto completo:http://hdl.handle.net/1822/13911
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/13911
Descrição
Resumo:Erbium doped nanocrystalline silicon thin films were produced by reactive magnetron r.f. sputtering. Their structural and chemical properties were studied by micro-Raman, spectroscopic ellipsometry and Rutherford backscattering spectroscopy. Films with different crystalline fraction and crystallite size were deposited by changing the deposition parameters. The impact of the composition and structure of Erbium ions environment on the 1.5 microm photoluminescence is discussed.

Registos relacionados