Seitz, R., Gaspar, C., Monteiro, T., Pereira, E., Poisson, M., & Beaumont, B. (2012). Photoluminescence between 3.36 eV and 3.41 eV from GaN epitaxial layers.
Chicago Style (17th ed.) CitationSeitz, R., C. Gaspar, T. Monteiro, E. Pereira, M.A Poisson, and B. Beaumont. Photoluminescence Between 3.36 EV and 3.41 EV from GaN Epitaxial Layers. 2012.
MLA (8th ed.) CitationSeitz, R., et al. Photoluminescence Between 3.36 EV and 3.41 EV from GaN Epitaxial Layers. 2012.
Warning: These citations may not always be 100% accurate.