Optical doping of ZnO with Tm by ion implantation

ZnO [0 0 0 1] single-crystals were implanted at room temperature with 150 keVTm+ ions at a fluence of 5 × 1015cm -2. Each sample was then subjected to one single 30min air annealing at 800°C, 950°C and 1050°C. The Tm lattice site location and defect recovery were investigated with Rutherford Backsca...

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Detalhes bibliográficos
Autor principal: Rita, E. (author)
Outros Autores: Alves, E. (author), Wahl, U. (author), Correia, J.G. (author), Neves, A.J. (author), Soares, M.J. (author), Monteiro, T. (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
PL
RBS/Channeling
Tm doping
ZnO
Annealing
Crystal defects
Crystal lattices
Ion implantation
Photoluminescence
Rutherford backscattering spectroscopy
Semiconducting gallium
Semiconductor doping
Single crystals
Thulium
Band gap excitation
Optical activation
Zinc oxide
Texto completo:http://hdl.handle.net/10773/6718
País:Portugal
Oai:oai:ria.ua.pt:10773/6718

Texto Completo

http://hdl.handle.net/10773/6718

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