Memristor based on amorphous zinc-tin oxide Schottky diodes
This work reports the fabrication and characterization of metal-insulator-metal (MIM) structures based on Schottky junction between platinum and zinc-tin oxide (ZTO) for memristor application. The devices were produced exclusively by physical vapor deposition methods at room temperature (RT). Before...
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| Formato: | masterThesis |
| Idioma: | eng |
| Publicado em: |
2019
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| Texto completo: | http://hdl.handle.net/10362/75825 |
| País: | Portugal |
| Oai: | oai:run.unl.pt:10362/75825 |