Photoluminescence decay in the ps time regime and structural properties of pulsed-laser deposited GaN

In this work we focus on the study of the fast photoluminescence decay in the ps time regime in comparison with structural properties of GaN films deposited by a cyclic pulsed laser deposition technique. Structural film properties are obtained from X-ray analysis and atomic force microscopy. Steady-...

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Detalhes bibliográficos
Autor principal: Sanguino, P. (author)
Outros Autores: Niehus, M. (author), Melo, L. (author), Schwarz, R. (author), Fedorov, A. (author), Martinho, J.M.G. (author), Soares, Manuel (author), Monteiro, Teresa (author)
Formato: article
Idioma:eng
Publicado em: 1000
Assuntos:
PLD of GaN
ps-Fluorescence decay
Transient photoconductivity
Atomic force microscopy
Dye lasers
Fluorescence
Grain boundaries
Morphology
Photoconductivity
Photoluminescence
Polycrystalline materials
Pulsed laser deposition
Sapphire
Thermoanalysis
Thin films
X ray analysis
X ray diffraction analysis
Multiphonon emission
Gallium nitride
Texto completo:http://hdl.handle.net/10773/5511
País:Portugal
Oai:oai:ria.ua.pt:10773/5511

Texto Completo

http://hdl.handle.net/10773/5511

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