Resistance Switching Memory Devices based on Zinc Oxide Nanoparticles on Paper Substrates

This work reports the development of resistive random access memory (RRAM) on paper using printed Zinc Oxide (ZnO) nanoparticles (NPs) as active layer. RRAM is a novel technology having attracted increasing attention due to their high-speed operation, high-density storage, and low voltage. Most impo...

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Detalhes bibliográficos
Autor principal: Franco, Miguel Alexandre Martins (author)
Formato: masterThesis
Idioma:eng
Publicado em: 2017
Assuntos:
Zinc oxide
Ethyl cellulose
Paper electronics
Resistive random access memory
Printed electronics
Screen-printing
Domínio/Área Científica::Engenharia e Tecnologia::Engenharia dos Materiais
Texto completo:http://hdl.handle.net/10362/21756
País:Portugal
Oai:oai:run.unl.pt:10362/21756

Texto Completo

http://hdl.handle.net/10362/21756

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