Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes
Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the po...
| Autor principal: | |
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| Outros Autores: | , , , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2013
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| Texto completo: | http://hdl.handle.net/10400.1/3253 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/3253 |