Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes

Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the po...

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Bibliographic Details
Main Author: Chen, Q. (author)
Other Authors: Bory, Benjamin F. (author), Kiazadeh, Asal (author), Rocha, Paulo R. F. (author), Gomes, Henrique L. (author), Verbakel, F. (author), De Leeuw, Dago M. (author), Meskers, S. C. J. (author)
Format: article
Language:eng
Published: 2013
Online Access:http://hdl.handle.net/10400.1/3253
Country:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3253

Internet

http://hdl.handle.net/10400.1/3253

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