Opto-electronic characterization of electron traps upon forming polymer oxide memory diodes

Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the po...

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Detalhes bibliográficos
Autor principal: Chen, Q. (author)
Outros Autores: Bory, Benjamin F. (author), Kiazadeh, Asal (author), Rocha, Paulo R. F. (author), Gomes, Henrique L. (author), Verbakel, F. (author), De Leeuw, Dago M. (author), Meskers, S. C. J. (author)
Formato: article
Idioma:eng
Publicado em: 2013
Texto completo:http://hdl.handle.net/10400.1/3253
País:Portugal
Oai:oai:sapientia.ualg.pt:10400.1/3253
Descrição
Resumo:Metal-insulator-polymer diodes where the insulator is a thin oxide (Al2O3) layer are electroformed by applying a high bias. The initial stage is reversible and involves trapping of electrons near the oxide/polymer interface. The rate of charge trapping is limited by electron transport through the polymer. Detrapping of charge stored can be accomplished by illuminating with light under short-circuit conditions. The amount of stored charge is determined from the optically induced discharging current transient as a function of applied voltage and oxide thickness. When the charge density exceeds 8 1017/m2, an irreversible soft breakdown transition occurs to a non-volatile memory diode.

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