Thin-film transistors based on p-type Cu2O thin films produced at room temperature

This work was funded by the Portuguese Science Foundation (FCT-MCTES) through projects PTDC/CTM/73943/2006, PTDC/EEA-ELC/64975/2006, ERC 2008 Advanced Grant (INVISIBLE Contract No. 228144) and IT R&D program of MKE (Contract No. 2006-S079-03, Smart window with transparent electronic devices) fro...

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Bibliographic Details
Main Author: Fortunato, Elvira Maria Correia (author)
Other Authors: Figueiredo, Vitor (author), Barquinha, Pedro Miguel Cândido (author), Elamurugu, Elangovan (author), Barros, Raquel (author), Gonçalves, Gonçalo (author), Park, Sang Hee Ko (author), Martins, Rodrigo Ferrão de Paiva (author), Hwang, Chisun (author)
Format: article
Language:eng
Published: 2017
Subjects:
Bottom gate
Electrical performance
Field-effect mobilities
On/off ratio
P-type
Polycrystalline structure
rf-Magnetron sputtering
Room temperature
Electrodeposition
Copper oxides
Cuprous oxide
Online Access:http://hdl.handle.net/10362/24020
Country:Portugal
Oai:oai:run.unl.pt:10362/24020

Internet

http://hdl.handle.net/10362/24020

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