Raman study of insulating and conductive ZnO: (Al, Mn) thin films

Raman spectroscopy results obtained for undoped and Al- and/or Mn-doped ZnO thin films produced by RF-sputtering are reported. The effect of the doping method (either co-sputtering or ion implantation), the dopant type and its concentration on the Raman-active vibrational modes in these films were s...

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Bibliographic Details
Main Author: Cerqueira, M. F. (author)
Other Authors: Viseu, T. M. R. (author), Campos, J. Ayres de (author), Rolo, Anabela G. (author), Lacerda-Arôso, T. de (author), Oliveira, F. (author), Bogdanovic-Radovic, I. (author), Alves, E. (author), Vasilevskiy, Mikhail (author)
Format: article
Language:eng
Published: 2015
Subjects:
Raman scattering
ZnO thin films
Al and Mn-doping
sputtering and implantation
ion implantation
local phonon modes
Raman spectroscopy
sputtering
thin films
zinc oxide
Ciências Naturais::Ciências Físicas
Science & Technology
Online Access:http://hdl.handle.net/1822/37624
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/37624
Description
Summary:Raman spectroscopy results obtained for undoped and Al- and/or Mn-doped ZnO thin films produced by RF-sputtering are reported. The effect of the doping method (either co-sputtering or ion implantation), the dopant type and its concentration on the Raman-active vibrational modes in these films were studied in detail. The results are discussed with focus on the peak shifts and broadening, and on the doping-induced relaxation of the symmetry selection rules. A particular attention is paid to the 520-530 cm-1 Raman band observed in all Mn containing samples and a simple theoretical model and arguments are presented in support of its relation to the local (gap) phonon mode produced by Mn atoms substituting Zn in the cationic sublattice of the ZnO crystal.

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