Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

The main purpose of this work is to present and to interpret the change of electrical properties of TaxNyOzthin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposi-tion: the flow of the reactive gases mixture (N2and O2, with a constant concentration ratio o...

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Detalhes bibliográficos
Autor principal: Cristea, D. (author)
Outros Autores: Crisan, A. (author), Cretu, N. (author), Borges, Joel Nuno Pinto (author), Lopes, Cláudia Jesus Ribeiro (author), Cunha, L. (author), Ion, V. (author), Dinescu, M. (author), Barradas, N. P. (author), Alves, E. (author), Apreutesei, M. (author), Munteanu, D. (author)
Formato: article
Idioma:eng
Publicado em: 2015
Assuntos:
Tantalum oxynitride
Electrical properties
Dielectric constant
Ciências Naturais::Outras Ciências Naturais
Science & Technology
Texto completo:http://hdl.handle.net/1822/39766
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/39766

Texto Completo

http://hdl.handle.net/1822/39766

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