Structure dependent resistivity and dielectric characteristics of tantalum oxynitride thin films produced by magnetron sputtering

The main purpose of this work is to present and to interpret the change of electrical properties of TaxNyOzthin films, produced by DC reactive magnetron sputtering. Some parameters were varied during deposi-tion: the flow of the reactive gases mixture (N2and O2, with a constant concentration ratio o...

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Bibliographic Details
Main Author: Cristea, D. (author)
Other Authors: Crisan, A. (author), Cretu, N. (author), Borges, Joel Nuno Pinto (author), Lopes, Cláudia Jesus Ribeiro (author), Cunha, L. (author), Ion, V. (author), Dinescu, M. (author), Barradas, N. P. (author), Alves, E. (author), Apreutesei, M. (author), Munteanu, D. (author)
Format: article
Language:eng
Published: 2015
Subjects:
Tantalum oxynitride
Electrical properties
Dielectric constant
Ciências Naturais::Outras Ciências Naturais
Science & Technology
Online Access:http://hdl.handle.net/1822/39766
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/39766

Internet

http://hdl.handle.net/1822/39766

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