Defect studies on fast and thermal neutron irradiated GaN

Single crystalline epitaxial GaN films were irradiated with fast (E > 1 MeV) or with fast and thermal neutrons. These irradiation conditions allow the separation of the effect of transmutational doping with Ge due to nuclear reactions with thermal neutrons on the damage production. High resolutio...

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Bibliographic Details
Main Author: Lorenz, K. (author)
Other Authors: Marques, J.G. (author), Franco, N. (author), Alves, E. (author), Peres, M. (author), Correia, M.R. (author), Monteiro, T. (author)
Format: article
Language:eng
Published: 1000
Subjects:
GaN
Neutron irradiation
Defects
Photoluminescence
Online Access:http://hdl.handle.net/10773/6157
Country:Portugal
Oai:oai:ria.ua.pt:10773/6157

Internet

http://hdl.handle.net/10773/6157

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