Strain relaxation in GaN films as a function of growth direction and buffer layer measured by Raman spectroscopy
We studied the residual strain in hexagonal GaN epitaxial layers grown exactly or slightly off the (0001) direction on sapphire substrates with either GaN or AlN buffer layers (BLs). The residual strain was determined by Raman spectroscopy. The results were compared with photoluminescence (PL) measu...
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| Outros Autores: | , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
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| Texto completo: | http://hdl.handle.net/10773/6484 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/6484 |