Nanoscale Memristor: Great potential for memory and synapse emulator for computing applications

This work reports the fabrication and electrical characterization of Metal-Insulator-Metal (MIM) devices for neuromorphic applications using zinc-tin-oxide (ZTO) and indium-gallium-zinc-oxide (IGZO) as the switching layers and molybdenum (Mo) for the devices ‘contacts. A lithographic mask was used a...

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Detalhes bibliográficos
Autor principal: Luís, Joana Cristina Marques (author)
Formato: masterThesis
Idioma:eng
Publicado em: 2020
Assuntos:
memristor
neuromorphic computing
molybdenum
ZTO
IGZO
system on panel
Domínio/Área Científica::Engenharia e Tecnologia::Nanotecnologia
Texto completo:http://hdl.handle.net/10362/90978
País:Portugal
Oai:oai:run.unl.pt:10362/90978

Texto Completo

http://hdl.handle.net/10362/90978

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