Enhancement of near infrared emission in La co-doped ZnO/Er nanoplates
Undoped and rare earth doped Er, Er/Yb and Er/Yb/La ZnO nanoplates were synthesized in order to study the effect of La co-doping on near infrared (NIR) emission properties of the Er ions hosted in the semiconductor. Samples were characterized by X-ray diffraction, scanning electron microscope, energ...
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| Outros Autores: | , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
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| Texto completo: | http://hdl.handle.net/10773/19522 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/19522 |
| Resumo: | Undoped and rare earth doped Er, Er/Yb and Er/Yb/La ZnO nanoplates were synthesized in order to study the effect of La co-doping on near infrared (NIR) emission properties of the Er ions hosted in the semiconductor. Samples were characterized by X-ray diffraction, scanning electron microscope, energy-dispersive X-ray spectroscopy. Emission spectra of the La co-doped Er/Yb ZnO nanoplates showed an efficiency enhancement of Er ion emission in NIR region around 1550 nm which is a very important wavelength for optical communication technologies. The enhancement mechanism for the NIR emission is discussed in detail. (C) 2014 Elsevier Ltd and Techna Group S.r.l. All rights reserved. |
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