Electronic and structural properties of doped amorphous and nanocrystalline silicon deposited at low substrate temperatures by radio-frequency plasma-enhanced chemical vapor deposition
The gas phase doping of hydrogenated amorphous silicon and hydrogenated nanocrystalline silicon thin films deposited on glass and on plastic (polyethylene terephthalate) substrates is reported. Two substrate temperatures were used during deposition: 25 degreesC and 100 degreesC. Films were deposited...
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| Outros Autores: | , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2003
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/1822/5555 |
| País: | Portugal |
| Oai: | oai:repositorium.sdum.uminho.pt:1822/5555 |