Image and color recognition using amorphous silicon p-i-n photodiodes

Large area hydrogenated amorphous silicon single and stacked p-i-n structures with low conductivity doped layers are proposed as monochrome and color image sensors. The layers of the structures are based on amorphous silicon alloys (a-Si(x)C(1-x):H). The current-voltage characteristics and the spect...

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Bibliographic Details
Main Author: Louro, Paula (author)
Other Authors: Vieira, Manuela (author), Fantoni, Alessandro (author), Fernandes, Miguel (author), Carvalho, C. N. (author), Lavareda, G. (author)
Format: article
Language:eng
Published: 2012
Subjects:
Photodiode
Image sensor
Color detection
Online Access:http://hdl.handle.net/10400.21/1342
Country:Portugal
Oai:oai:repositorio.ipl.pt:10400.21/1342

Internet

http://hdl.handle.net/10400.21/1342

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