Frequency characterization of memristive devices
This paper proposes a new methodology suitable for frequency characterization of memristive devices (MDs) and systems. MDs are usually described by their associated hysteresis loops. Their distinctive memory properties stem from this unusual characteristic. Understanding the frequency behavior of th...
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| Outros Autores: | , |
| Formato: | conferenceObject |
| Idioma: | eng |
| Publicado em: |
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/11849 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/11849 |
| Resumo: | This paper proposes a new methodology suitable for frequency characterization of memristive devices (MDs) and systems. MDs are usually described by their associated hysteresis loops. Their distinctive memory properties stem from this unusual characteristic. Understanding the frequency behavior of these devices is of paramount importance for a multitude of different applications. This paper presents a morphological method, based on loop area and the length for the analysis of the frequency dependence of MDs. An example, considering thin film TiO2 MDs reveals that the peak frequency (frequency where the loop has maximum area) of the device depends strongly on device dimensions and physical properties. |
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