Electrical characterization of organic based transistors: stability issues
An investigation into the stability of metal insulator semiconductor (MIS) transistors based on alpha-sexithiophene is reported. In particular the kinetics of the threshold voltage shift upon application of a gate bias has been determined. The kinetics follow a stretched-hyperbola type behavior, in...
| Autor principal: | |
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| Outros Autores: | , , , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2015
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| Texto completo: | http://hdl.handle.net/10400.1/6620 |
| País: | Portugal |
| Oai: | oai:sapientia.ualg.pt:10400.1/6620 |