Electrical properties of AlNxOy thin films prepared by reactive magnetron sputtering

Direct current magnetron sputtering was used to produce AlNxOy thin films, using an aluminum target, argon and a mixture of N2+O2 (17:3) as reactive gases. The partial pressure of the reactive gas mixture was increased, maintaining the discharge current constant. Within the two identified regimes of...

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Detalhes bibliográficos
Autor principal: Borges, Joel Nuno Pinto (author)
Outros Autores: Martin, N. (author), Barradas, Nuno P. (author), Alves, E. (author), Eyidi, D. (author), Beaufort, Marie France (author), Riviere, J. P. (author), Vaz, F. (author), Marques, L. (author)
Formato: article
Idioma:eng
Publicado em: 2012
Assuntos:
Aluminum oxynitride
Magnetron sputtering
Electrical properties
Science & Technology
Texto completo:http://hdl.handle.net/1822/21095
País:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/21095

Texto Completo

http://hdl.handle.net/1822/21095

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