Optical doping and damage formation in AIN by Eu implantation

AlN films grown on sapphire were implanted with 300 keV Eu ions to fluences from 3×1014 to 1.4×1017 atoms/cm2 in two different geometries: “channeled” along the c-axis and “random” with a 10° angle between the ion beam and the surface normal. A detailed study of implantation damage accumulation is p...

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Bibliographic Details
Main Author: Lorenz, K. (author)
Other Authors: Alves, E. (author), Gloux, F. (author), Ruterana, P. (author), Peres, M. (author), Neves, A. J. (author), Monteiro, T. (author)
Format: article
Language:eng
Published: 2012
Subjects:
Aluminium compounds
Annealing
III-V semiconductors
Ion beams
Ion implantation
Photoluminescence
Sapphire
Semiconductor doping
Wide band gap semiconductors
Online Access:http://hdl.handle.net/10773/5672
Country:Portugal
Oai:oai:ria.ua.pt:10773/5672

Internet

http://hdl.handle.net/10773/5672

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