Optical doping and damage formation in AIN by Eu implantation
AlN films grown on sapphire were implanted with 300 keV Eu ions to fluences from 3×1014 to 1.4×1017 atoms/cm2 in two different geometries: “channeled” along the c-axis and “random” with a 10° angle between the ion beam and the surface normal. A detailed study of implantation damage accumulation is p...
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| Outros Autores: | , , , , , |
| Formato: | article |
| Idioma: | eng |
| Publicado em: |
2012
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| Assuntos: | |
| Texto completo: | http://hdl.handle.net/10773/5672 |
| País: | Portugal |
| Oai: | oai:ria.ua.pt:10773/5672 |