Dependence of Ga-doped ZnO thin film properties on different sputtering process parameters: Substrate temperature, sputtering pressure and bias voltage

This paper reports on the effects of different sputtering deposition process parameters (substrate temperature, sputtering pressure and bias voltage) on the electrical, optical, structural and morphological properties of gallium-doped ZnO (ZnO:Ga) of ~1 μm thick. These highly transparent and conduct...

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Bibliographic Details
Main Author: Castro, M. V. (author)
Other Authors: Tavares, C. J. (author)
Format: article
Language:eng
Published: 2015
Subjects:
Thin films
Transparent conducting oxide
Gallium-doped zinc oxide
Sputtering
Electrical properties
Pressure
Bias voltage
Substrate temperature
Ciências Naturais::Ciências Físicas
Science & Technology
Online Access:http://hdl.handle.net/1822/36973
Country:Portugal
Oai:oai:repositorium.sdum.uminho.pt:1822/36973

Internet

http://hdl.handle.net/1822/36973

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